inchange semiconductor product specification silicon pnp power transistors 2SA1096 2SA1096a description with to-126 package complement to type 2sc2497/2sc2497a applications for low-frequency power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter - 70 v 2SA1096 -50 v ceo collector- emitter voltage 2SA1096a open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -2 a i cm collector current-peak -3 a 1.2* 1 p d total power dissipation t c =25 5* 2 w t j junction temperature 150 t stg storage temperature -55 +150 note) *1: without heat sink *2: with a 100 100 2 mm a1 heat sink www..net
inchange semiconductor product specification silicon pnp power transistors 2SA1096 2SA1096a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA1096 -50 v (br)ceo collector-emitter breakdown voltage 2SA1096a i c =-2ma ; i b =0 -60 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -70 v v cesat collector-emitter saturation voltage i c =-1.5a ;i b =-0.15a -1.0 v v besat base-emitter saturation voltage i c =-1.5a ;i b =-0.15a -1.5 v i ceo collector cut-off current v ce =-10v; i b =0 -1 a i cbo collector cut-off current v cb =-20v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-1a ; v ce =-5v 80 220 c ob output capacitance i e =0 ; v cb =-20v,f=1mhz 55 pf f t transition frequency i e =-0.5a ; v cb =-5v,f=200mhz 150 mhz ? h fe classifications q r 80-160 120-220 2
inchange semiconductor product specification silicon pnp power transistors 2SA1096 2SA1096a package outline 3 fig.2 outline dimensions
inchange semiconductor product specification silicon pnp power transistors 2SA1096 2SA1096a 4
inchange semiconductor product specification silicon pnp power transistors 2SA1096 2SA1096a 5
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